features low cost diffus ed junction low leakage low forward voltage drop high current capability easily cleaned with freon, alcohol,isopropanol nn and similar solvents mechanical data cas e:jedec do--27,m olded plas tic terminals: axial lead ,solderable per mil- std-202,method 208 polarity: color band denotes cathode weight: 0.041 ounces,1.15 grams mounting position: any ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,50hz,resistive or inductive load. for capacitive load,derate by 20%. bym 36d bym 36e bym 36f bym 36g units maximum recurrent peak reverse voltage v rrm 800 1000 1200 1400 v ma x imu m rms v o ltage v rms 560 700 840 980 v maximum dc blocking voltage v dc 800 1000 1200 1400 v maximum average forw ard rectif ied current 9.5 m m l e a d l e n g th, @ t a = 7 5 p e ak f o rward s u r ge c u rr e n t 10ms single half -sine-w ave s upe r i m po s ed on r at e d l o a d @ t j =125 m a x i m u m i n s t ant a neo u s f o r w a r d v o l t a ge @ 3 . 0 a v f v maximum reverse current @t a =25 at rated dc blocking voltage @t a =100 maximum reverse recovery time (note1) t rr ns typical junction capacitance (note2) c j pf typical thermal resistance (note3) r ja /w operating junction temperature range t j storage temperature range t stg note: 1. measured with i f = 0 . 5 a , i r = 1 a , i r r = 0 . 25a. 3. thermal resistance f rom junction to ambient. a a 2. measured at 1.0mhz and applied rev erse v oltage of 4.0v dc. 5.0 100.0 250 i f(av) 1 . 5 7 a i fsm i r -55 ---- + 150 -55 ---- + 150 150 22 32 200 100 BYM36A (z) - - - bym36g (z) d o - 2 7 200 200 140 200.0 600 bym 36a 600 420 bym 36b 3.0 maximum ratings and electrical characteristics 400 280 voltage range: 200 --- 1400 v current: 3.0 a fast recovery rect ifiers bym 36c dimensions in millimeters www.diode.kr diode semiconductor korea
1 0.1 1 2 4 6 10 40 20 100 60 2 4 10 20 40 1 0 0 200 0.40.2 t j =25 f=1mhz 0.6 0 .8 1.0 1 .2 1.4 1 .6 0.01 0.02 0.06 0.04 0.1 0.2 0.4 1.0 2 4 10 100 t j =25 pulse width=300 www.diode.kr diode semiconductor korea
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